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| Diodes FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / UMN1N / UMP1N / UMN11N / UMP11N Switching diode FMN1 / FMP1 / IMN10 / IMN11 / IMP11 UMN1N / UMP1N / UMN11N / UMP11N !Applications Ultra high speed switching !External dimensions (Units : mm) FMN1 / FMP1 2.90.2 1.90.2 0.95 0.95 1.1 +0.2 -0.1 UMN1N / UMP1N 2.00.2 1.30.1 0.90.1 0.7 0.80.1 0.65 0.65 1.250.1 2.10.1 !Features 1) A wide variety of configurations are available. (UMD5, UMD6, SMD5, SMD6) 2) Multiple diodes in one small surface mount package. 3) Diode characteristics are matched in the package. 1.6 -0.1 +0.1 0.2 -0.05 0.150.05 0.3 -0.05 0.15 0.30.6 +0.1 +0.1 -0.06 (All leads have the same dimensions.) (All leads have the same dimensions.) ROHM : SMD5 EIAJ : SC-74A JEDEC : - IMN10 / IMN11 / IMP11 2.90.2 Marking FMN1 : N1 FMP1 : P1 ROHM : UMD5 EIAJ : SC-88A JEDEC : SOT-353 UMN11N / UMP11N Marking UMN1N : N1 UMP1N : P1 !Construction Silicon epitaxial planar 1.90.2 0.95 0.95 1.1 +0.2 -0.1 2.00.2 1.30.1 0.80.1 0.90.1 0.7 0.65 0.65 1.250.1 2.10.1 2.80.2 1.6 -0.1 +0.2 0.3 -0.05 +0.1 00.1 +0.1 0.2 -0.05 00.1 0.1Min. 0.15 0.30.6 +0.1 -0.06 0.150.05 (All leads have the same dimensions.) (All leads have the same dimensions.) ROHM : SMD6 EIAJ : SC-74 JEDEC : SOT-457 Marking IMN10 : N10 IMN11 : N11 IMP11 : P11 ROHM : UMD6 EIAJ : SC-88 JEDEC : SOT-363 Marking UMN11N : N11 UMP11N : P11 !Circuit FMN1 FMP1 IMN10 SMD5 / SMD6 Package IMN11 IMP11 UMN1N UMP1N UMD5 / UMD6 Package UMN11N UMP11N 0.1Min. 2.80.2 +0.2 00.1 00.1 Diodes !Absolute maximum ratings (Ta=25C) Type FMN1 UMN1N FMP1 UMP1N IMN10 IMN11 UMN11N IMP11 UMP11N Peak reverse voltage VRM (V) DC reverse voltage VR (V) Peak forward current IFM (mA) FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / UMN1N / UMP1N / UMN11N / UMP11N Mean rectifying current IO (mA) Power Surge Storage Junction dissipation current temperature temperature (1s) (TOTAL) Tstg (C) Tj (C) Isurge (A) Pd (mW) 80 80 80 80 80 80 80 80 80 80 80 80 300 300 300 25 25 100 100 100 0.25 0.25 4 4 4 150/80 150/80 300 1 150 2 150 150 150 150 150 -55+150 -55+150 -55+150 -55+150 -55+150 150 2 1 Not to exceed 200mW per element. 2 Not to exceed 120mW per element. !Electrical characteristics (Ta=25C) Forward voltage Reverse current Capacitance between terminals Reverse recovery time Type VF (V) Max. 0.9 0.9 1.2 1.2 1.2 Cond. IF (mA) 5 5 100 100 100 IR (A) Max. 0.1 0.1 0.1 0.1 0.1 Cond. VR (V) 70 70 70 70 70 CT (pF) Max. 3.5 3.5 3.5 3.5 3.5 Cond. VR (V) 6 6 6 6 6 f (MHz) 1 1 1 1 1 trr (ns) Max. 4 4 4 4 4 Cond. VR (V) 6 6 6 6 6 IF (mA) 5 5 5 5 5 FMN1 UMN1N FMP1 UMP1N IMN10 IMN11 UMN11N IMP11 UMP11N !Electrical characteristic curves (Ta=25C) 125 POWER DISSIPATION : Pd / PdMax. (%) 50 FORWARD CURRENT : IF (mA) 1 000 Ta=100C REVERSE CURRENT : IR (nA) 20 10 5 2 1 0.5 0.2 85C 50C 0C -30C 100 100 75C 50C 75 10 25C 0C -25C 50 1.0 Ta=25C 25 0.1 0 0 25 50 75 100 125 150 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE : VF (V) 0.01 0 10 20 30 40 50 AMBIENT TEMPERATURE : Ta (C) REVERSE VOLTAGE : VR (V) Fig.1 Power reduction curve Fig. 2 Forward current vs. forward voltage (P Type) Fig.3 Reverse current vs. reverse voltage (P Type) Diodes 50 FORWARD CURRENT : IF (mA) FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / UMN1N / UMP1N / UMN11N / UMP11N CAPACITANCE BETWEEN TERMINALS : CT (pF) 1 000 Ta=100C 75C 50C REVERSE CURRENT : IR (nA) 20 10 5 2 1 0.5 0.2 0.1 0 85C 50C 0C -30C Ta=25C f=1MHz 4 100 10 25C 0C 1.0 2 P Type -25C Ta=25C 0.1 N Type 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE : VF (V) 0.01 0 10 20 30 40 50 0 0 2 4 6 8 10 12 14 16 REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.4 Forward current vs. forward voltage (N Type) Fig.5 Reverse current vs. reverse voltage (N Type) Fig.6 Capacitance between terminals vs. reverse voltage 10 0.01F Ta=25C VR=6V D.U.T. REVERSE RECOVERY TIME : trr (ns) 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 5k PULSE GENERATOR OUTPUT 50 50 SAMPLING OSCILLOSCOPE P Ty pe INPUT N Type 8 9 10 FORWARD CURRENT : IF (mA) 100ns Fig.7 Reverse recovery time vs. forward current OUTPUT trr 0 Fig.8 Reverse recovery time (trr) measurement circuit 0.1IR IR |
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